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BC858AWT1G BC858AWT1G is a PNP general purpose transistor from onsemi. It features a collector-emitter breakdown voltage of -30V, maximum collector current of 100mA, and power dissipation of 150mW.
Mfr Part #:

BC858AWT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC858AWT1G is a PNP general purpose transistor from onsemi. It features a collector-emitter breakdown voltage of -30V, maximum collector current of 100mA, and power dissipation of 150mW.
✓ Total Stock: 81,000 pcs
$ Price Range: $0.04 - $0.19

BC858AWT1G Available from 2 distributors

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✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
75,000 pcs
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75000 pcs On Request 1 On Request On Request On Request On Request On Request
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Non-Authorised Inventory information
6,000 pcs
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6000 pcs On Request 1 On Request On Request On Request On Request On Request
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BC858AWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BC858AWT1G Description

Short technical summary and product information.

The BC858AWT1G is a PNP silicon general purpose transistor designed for amplifier and switching applications. It is housed in the compact SC-70/SOT-323 surface mount package, making it suitable for low power surface mount designs.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage (VCEO) of -30V, a maximum continuous collector current (IC) of 100mA, and a maximum power dissipation (PD) of 150mW on an FR-5 board. The device offers a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V Vce, with a maximum Vce saturation voltage of 650mV at 100mA collector current.

 

The transistor is rated for an operating junction temperature range of -55°C to 150°C. It is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

BC858AWT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC858A
Canonical Name: BC858AWT1G PNP General Purpose Transistor
Subcategory: Single PNP

BC858AWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC858AWT1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858AWT1G Features

  • PNP silicon general purpose transistor.
  • Collector-emitter breakdown voltage of -30V.
  • Maximum collector current of 100mA.
  • Power dissipation of 150mW.
  • Surface mount SC-70/SOT-323 package.

BC858AWT1G Applications

  • General purpose amplifier circuits.
  • Low power switching applications.
  • Portable and battery-powered devices.
  • Signal processing and driver stages.

BC858AWT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the package type for the BC858AWT1G?

The BC858AWT1G is housed in an SC-70, SOT-323 surface mount package (supplier device package SC-70-3 (SOT323)).

What is the operating temperature range of the BC858AWT1G?

The operating junction temperature range is -55°C to 150°C.

Is the BC858AWT1G RoHS compliant?

Yes, the BC858AWT1G is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.

What is the maximum collector current for the BC858AWT1G?

The maximum continuous collector current (IC) is 100mA.

What is the collector-emitter breakdown voltage of the BC858AWT1G?

The minimum collector-emitter breakdown voltage (VCEO) is -30V.

What is the DC current gain (hFE) of the BC858AWT1G?

The minimum DC current gain (hFE) is 125 at Ic=2mA and Vce=5V.

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