| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,835 pcs
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2835 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC858AWT1 from ON Semiconductor is a PNP bipolar junction transistor (BJT) suitable for various electronic applications. This component is designed for surface mount technology, utilizing the SC-70-3 (SOT323) package.
Key electrical characteristics include a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. It offers a power dissipation rating of 150mW and a transition frequency of 100MHz. The Vce saturation is specified at 650mV typical at 5mA base current and 100mA collector current, with a minimum DC current gain (hFE) of 125 at 2mA collector current and 5V Vce.
The operating temperature range for this transistor is from -55°C to 150°C. Its compact SC-70-3 package makes it ideal for space-constrained designs. The transistor type is PNP, and it operates within standard electronic circuits requiring a general-purpose PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC858AWT1 is a PNP bipolar junction transistor.
The maximum collector current is 100 mA.
The collector-emitter breakdown voltage is 30 V.
The BC858AWT1 is available in a surface-mount SC-70-3 (SOT-323) package.
The operating temperature range is -55°C to 150°C.
The minimum DC current gain is 125 at 2 mA and 5 V.
The transition frequency is 100 MHz.