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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,038 pcs
|
9038 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,585 pcs
|
2585 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
55 pcs
|
55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector Current - Peak | |
| Collector Cutoff Current (Maximum @ VCB = -30 V, TA = 150 °C) | |
| Collector Cutoff Current (Maximum @ VCB=-30 V, TA=25 °C) | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C) | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate) | |
| Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC858ALT1G is a PNP silicon general purpose transistor from onsemi, designed for use in a wide range of switching and amplification applications. It is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for high-density PCB designs.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V, a maximum collector-base voltage (VCBO) of 30V, and a maximum emitter-base voltage (VEBO) of 5V. The device can handle a continuous collector current of up to 100mA and a peak current of 200mA. It offers a DC current gain (hFE) of 125 minimum at 2mA and 5V, and a typical transition frequency of 100MHz.
The transistor is rated for an operating temperature range of -55°C to 150°C. Power dissipation is 300mW on an alumina substrate and 225mW on an FR-5 board. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
| 10+ | $0.08 | $0.08 |
| 100+ | $0.05 | $0.05 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.03 | $0.03 |
| 3,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 30V.
The maximum continuous collector current is 100mA.
The BC858ALT1G is available in a SOT-23-3 (TO-236) surface mount package.
The operating temperature range is -55°C to 150°C.
Yes, the BC858ALT1G is RoHS compliant.
The minimum DC current gain (hFE) is 125 at Ic=2mA and Vce=5V.
The typical transition frequency is 100MHz.