BC858ALT1G The BC858ALT1G is a PNP general purpose transistor from onsemi. It is rated for a maximum collector-emitter voltage of 30V and a continuous collector current of 100mA.
Mfr Part #:

BC858ALT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC858ALT1G is a PNP general purpose transistor from onsemi. It is rated for a maximum collector-emitter voltage of 30V and a continuous collector current of 100mA.
Total Stock: 14,578 pcs
$ Price Range: $0.02 - $0.19

BC858ALT1G Available from 4 distributors

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Non-Authorised

BC858ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Current - Peak
Collector Cutoff Current (Maximum @ VCB = -30 V, TA = 150 °C)
Collector Cutoff Current (Maximum @ VCB=-30 V, TA=25 °C)
Collector-Base Breakdown Voltage
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Breakdown Voltage
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Ambient (Maximum @ Alumina Substrate)
Thermal Resistance Junction To Ambient (Maximum @ FR -5 Board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC858ALT1G Description

Short technical summary and product information.

The BC858ALT1G is a PNP silicon general purpose transistor from onsemi, designed for use in a wide range of switching and amplification applications. It is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for high-density PCB designs.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V, a maximum collector-base voltage (VCBO) of 30V, and a maximum emitter-base voltage (VEBO) of 5V. The device can handle a continuous collector current of up to 100mA and a peak current of 200mA. It offers a DC current gain (hFE) of 125 minimum at 2mA and 5V, and a typical transition frequency of 100MHz.

 

The transistor is rated for an operating temperature range of -55°C to 150°C. Power dissipation is 300mW on an alumina substrate and 225mW on an FR-5 board. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

BC858ALT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC856ALT1G
Canonical Name: BC858ALT1G PNP General Purpose Transistor
Subcategory: General Purpose Transistor

BC858ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC858ALT1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.08 $0.08
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC858ALT1G Features

  • PNP silicon general purpose transistor.
  • Rated for 30V collector-emitter voltage.
  • Handles 100mA continuous collector current.
  • Surface mount SOT-23-3 package.
  • RoHS compliant and Pb-Free.

BC858ALT1G Applications

  • Used in general purpose switching circuits.
  • Suitable for signal amplification stages.
  • Ideal for portable and battery-powered devices.
  • Used in consumer electronics and industrial controls.

BC858ALT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC858ALT1G?

The maximum collector-emitter voltage (VCEO) is 30V.

What is the continuous collector current rating of the BC858ALT1G?

The maximum continuous collector current is 100mA.

What package type is the BC858ALT1G available in?

The BC858ALT1G is available in a SOT-23-3 (TO-236) surface mount package.

What is the operating temperature range of the BC858ALT1G?

The operating temperature range is -55°C to 150°C.

Is the BC858ALT1G RoHS compliant?

Yes, the BC858ALT1G is RoHS compliant.

What is the DC current gain (hFE) of the BC858ALT1G?

The minimum DC current gain (hFE) is 125 at Ic=2mA and Vce=5V.

What is the transition frequency of the BC858ALT1G?

The typical transition frequency is 100MHz.

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