| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,175 pcs
|
1175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BC857SE6327 is a PNP bipolar junction transistor designed for switching applications. It offers a maximum collector current of 0.2A and a maximum collector-emitter voltage of 45V.
Key electrical characteristics include a minimum DC current gain (hFE) of 125 and a nominal transition frequency (fT) of 200 MHz. The maximum saturation voltage (VCEsat) is 0.65V.
This component is housed in a Small Outline package, specifically R-Pdso-G6, and is designed for surface mounting with gull wing terminals. It operates within a maximum ambient temperature of 150°C and has a maximum power dissipation of 0.25W at ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the BC857SE6327 is 0.2A.
The maximum collector-emitter voltage (Vce) for the BC857SE6327 is 45V.
The minimum DC current gain (hFE) for the BC857SE6327 is 125.
The nominal transition frequency (fT) for the BC857SE6327 is 200 MHz.
The maximum operating temperature for the BC857SE6327 is 150°C.
The BC857SE6327 is supplied in a Small Outline package, R-Pdso-G6.
The BC857SE6327 is RoHS3 Compliant.