BC857SE6327

The BC857SE6327 is a dual PNP bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is designed for general-purpose amplification and switching applications. The device integrates two PNP transistors in a single surface-mount package, offering space savings and matched characteristics. Key electrical specifications include a minimum collector-emitter breakdown voltage (Vce) of 45V, a maximum collector current (Ic) of 15 nA (ICBO leakage), and a maximum power dissipation of 250 mW. The DC current gain (hFE) is a minimum of 200 at Ic=2mA and Vce=5V. The maximum Vce saturation voltage is 650 mV at Ib=5mA and Ic=100mA. The typical transition frequency (ft) is 250 MHz, making it suitable for low-frequency to medium-frequency applications. The device is housed in a 6-VSSOP, SC-88, SOT-363 package, specifically the SOT-363 supplier device package, and is designed for surface-mount mounting. The operating junction temperature range is up to 150°C. This transistor array is commonly used in signal processing, driver stages, and other general-purpose circuits where dual PNP transistors are required.