BC857CS_R1_00001 PANJIT BC857CS_R1_00001 is a dual PNP general purpose transistor. It features a maximum collector-emitter voltage of 45V, collector current of 100mA, and a power dissipation of 225mW.
Mfr Part #:

BC857CS_R1_00001

Available from 1 distributors
Mfr Name: PANJIT
PANJIT
PANJIT BC857CS_R1_00001 is a dual PNP general purpose transistor. It features a maximum collector-emitter voltage of 45V, collector current of 100mA, and a power dissipation of 225mW.
Total Stock: 30,000 pcs
$ Price Range: $0.03 - $0.23

BC857CS_R1_00001 Available from 1 distributor

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BC857CS_R1_00001 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Weight

BC857CS_R1_00001 Description

Short technical summary and product information.

The PANJIT BC857CS_R1_00001 is a dual PNP general purpose transistor designed for amplifier and switching applications. It is housed in a compact SOT-363 surface mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45V, a maximum collector current (IC) of 100mA, and a power dissipation of 225mW. The device offers a minimum DC current gain (hFE) of 420 at 2mA, 5V, and a transition frequency (fT) of 200MHz, making it suitable for high-frequency applications.

 

The transistor is rated for operation over a junction temperature range of -55°C to 150°C. It is fully RoHS3 compliant, lead-free, and halogen-free, meeting modern environmental standards. The SOT-363 package provides a small footprint ideal for space-constrained designs. The dual transistor configuration allows for space savings and matched performance in differential amplifier stages or other applications requiring two PNP transistors.

BC857CS_R1_00001 Quick Information

Product Type: Bipolar Junction Transistor (BJT) Array
Series: BC857
Canonical Name: PANJIT BC857CS Dual PNP General Purpose Transistor
Subcategory: Array

BC857CS_R1_00001 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

BC857CS_R1_00001 Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.14 $0.14
100+ $0.09 $0.09
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05
6,000+ $0.04 $0.04
9,000+ $0.04 $0.04
24,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857CS_R1_00001 Features

  • Dual PNP transistor in SOT-363 package.
  • Maximum collector-emitter voltage of 45V.
  • Collector current rating up to 100mA.
  • Power dissipation of 225mW.
  • RoHS compliant and halogen free.

BC857CS_R1_00001 Applications

  • General purpose amplifier applications.
  • Switching circuits up to 100mA.
  • Portable and battery-powered devices.
  • Signal processing and driver stages.

BC857CS_R1_00001 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

45V.

What is the package type?

SOT-363.

What is the operating temperature range?

-55°C to 150°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free.

What is the DC current gain (hFE)?

Minimum 420 at Ic=2mA, Vce=5V.

What is the transition frequency?

200 MHz.

What is the mounting type?

Surface mount, SOT-363 package.

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