BC857CLT1G This PNP transistor is designed for general purpose amplification and switching. It features a 45V collector-emitter voltage, 100mA collector current, and a 100MHz transition frequency.
Mfr Part #:

BC857CLT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
This PNP transistor is designed for general purpose amplification and switching. It features a 45V collector-emitter voltage, 100mA collector current, and a 100MHz transition frequency.
Total Stock: 48,930 pcs
$ Price Range: $0.03 - $0.12

BC857CLT1G Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
46,020 pcs
46020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,910 pcs
2910 pcs On Request 1 On Request On Request On Request On Request On Request

BC857CLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO) Max
Current
DC Current Gain (hFE) (Max) (Ic = 2 mA, Vce = 5 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO) Max
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC857CLT1G Description

Short technical summary and product information.

The BC857CLT1G is a PNP silicon bipolar junction transistor from onsemi, part of the BC856ALT1G series of general purpose transistors. It is designed for low-power amplification and switching applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 45V, collector-base voltage (VCBO) of 50V, and emitter-base voltage (VEBO) of 5V. The device can handle a continuous collector current of 100mA and a peak current of 200mA. DC current gain (hFE) ranges from 420 to 800 at Ic=2mA, Vce=5V, ensuring consistent amplification characteristics. The typical transition frequency is 100MHz, making it suitable for audio and low-frequency signal processing. VCE saturation voltage is 650mV maximum at 100mA. Power dissipation is 300mW on an alumina substrate, with a junction-to-ambient thermal resistance of 417°C/W. The operating junction temperature range is -55°C to 150°C. The transistor is housed in a SOT-23-3 surface mount package (also known as TO-236 or SC-59). It is Pb-Free, Halogen Free/BFR Free, and RoHS3 compliant, meeting environmental standards for electronic assemblies.

BC857CLT1G Quick Information

Product Type: PNP Bipolar Junction Transistor
Series: BC856ALT1G Series
Canonical Name: BC857CLT1G PNP General Purpose Transistor
Subcategory: Single

BC857CLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC857CLT1G Estimated Pricing

Qty Low High
1+ $0.12 $0.12
10+ $0.09 $0.09
100+ $0.05 $0.05
500+ $0.03 $0.03
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857CLT1G Features

  • PNP silicon bipolar junction transistor.
  • Rated for 45V collector-emitter voltage.
  • Supports up to 100mA collector current.
  • High DC current gain up to 800.
  • Surface mount SOT-23-3 package.

BC857CLT1G Applications

  • General purpose amplification and switching.
  • Signal processing in audio circuits.
  • Driver stages in low power circuits.
  • Logic level translation.

BC857CLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC857CLT1G?

The maximum collector-emitter voltage is 45V.

What is the package type of the BC857CLT1G?

It is available in a SOT-23-3 surface mount package, also known as TO-236 or SC-59.

What is the operating temperature range of this transistor?

The operating junction temperature range is -55°C to 150°C.

Is the BC857CLT1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.

What is the DC current gain (hFE) range of the BC857CLT1G?

The DC current gain ranges from 420 minimum to 800 maximum at Ic=2mA, Vce=5V.

What is the typical transition frequency of this transistor?

The typical transition frequency is 100MHz.

What is the maximum collector current the BC857CLT1G can handle?

The maximum continuous collector current is 100mA, with a peak current of 200mA.

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