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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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298,000 pcs
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298000 pcs | On Request | 1 | On Request | On Request | 0348+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Infineon Technologies BC857BWE6327 is a PNP bipolar junction transistor designed for general purpose switching and amplification applications. It is housed in a compact SC-70 (SOT-323) surface-mount package, making it suitable for space-constrained designs.
Key electrical specifications include a maximum collector-emitter voltage (Vce) of 45V, a maximum collector current (Ic) of 100mA, and a power dissipation (Ptot) of 250mW. The transistor offers a typical transition frequency (ft) of 250MHz and a minimum DC current gain (hFE) of 220 at 2mA collector current and 5V collector-emitter voltage. The maximum collector-emitter saturation voltage (Vce(sat)) is 650mV at a base current of 5mA and collector current of 100mA.
The device is rated for a maximum junction operating temperature of 150°C. It is supplied in the PG-SOT323 package, which is equivalent to the industry-standard SC-70 and SOT-323 footprints.
| Qty | Low | High |
|---|---|---|
| 8,955+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC857BWE6327 is a PNP bipolar junction transistor.
The maximum collector-emitter voltage (Vce) is 45V.
The maximum collector current (Ic) is 100mA.
The transistor is available in an SC-70, SOT-323 surface-mount package.
The maximum operating junction temperature is 150°C.
The typical transition frequency (ft) is 250MHz.
The minimum DC current gain (hFE) is 220 at a test condition of Ic=2mA and Vce=5V.