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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
69,000 pcs
|
69000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,938 pcs
|
1938 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
959 pcs
|
959 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Base-Emitter On Voltage (VBE(on)) (Minimum/Typical/Maximum @ IC = -10 mA, VCE = -5 V) | |
| Base-Emitter On Voltage (VBE(on)) (Minimum/Typical/Maximum @ IC = -2 mA, VCE = -5 V) | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current - Peak | |
| Collector-Base Breakdown Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) (Maximum @ IC=10 mA, IB=0.5 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Typical/Maximum @ IC = -10 µA, VCE = -5 V) | |
| Emitter-Base Breakdown Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (PD) (Maximum @ FR -4 board, 1.0 x 1.0 in pad) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance, Junction-to-Ambient (RθJA) (Maximum @ FR -4 board, 1.0 x 1.0 in pad) | |
| Thermal Resistance, Junction-to-Ambient (RθJA) (Maximum @ FR -4 board, minimum pad) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC857BTT1G is a PNP silicon general purpose transistor from On Semiconductor, housed in the compact SOT-416/SC-75 surface mount package. It is designed for low power general purpose amplifier applications.
Key electrical characteristics include a collector-emitter breakdown voltage of -45V, collector-base breakdown voltage of -50V, and continuous collector current of -100mA (peak -200mA). The device offers a DC current gain (hFE) range of 220-475 at IC=-2mA, VCE=-5V, and a typical current-gain bandwidth product of 100MHz. Power dissipation is rated at 200mW on FR-4 minimum pad and 300mW on a 1.0x1.0 inch pad. Thermal resistance junction-to-ambient is 600°C/W for minimum pad and 400°C/W for larger pad.
The transistor is Pb-Free and AEC-Q101 qualified (NSV prefix variant), making it suitable for automotive applications requiring stringent quality control. The package is marked with device code 3F. This device is commonly used in signal amplification, switching, and general purpose circuit designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.16 | $0.16 |
| 10+ | $0.10 | $0.10 |
| 100+ | $0.06 | $0.06 |
| 500+ | $0.04 | $0.04 |
| 1,000+ | $0.04 | $0.04 |
| 3,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is -45V, collector-base -50V, emitter-base -5V.
Surface mount SC-75/SOT-416 package.
-55°C to 150°C junction temperature.
The device is listed as RoHS3 compliant, but this status is unverified. The datasheet confirms it is Pb-Free.
Continuous -100mA, peak -200mA.
220-475 at IC=-2mA, VCE=-5V; 150-475 at IC=-10µA, VCE=-5V.
200mW on FR-4 min pad, 300mW on 1.0x1.0in pad at 25°C.