| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC857BT,115 is a PNP bipolar junction transistor designed for general purpose switching and amplification applications. It features a collector-emitter voltage (VCEO) of -45V and a collector current (IC) of -100mA, making it well-suited for low-power circuits in portable equipment.
Electrical characteristics include a DC current gain (hFE) of 220 minimum at 2mA, 5V and a transition frequency of 100 MHz. The transistor is housed in a surface-mount SC-75 (SOT416) plastic package, which is compact and suitable for automated assembly. The total power dissipation is 150 mW, and the junction temperature can reach up to 150°C.
This device is the PNP complement to the NPN series BC846T and BC847T, allowing for complementary circuit designs. It is ideal for use in consumer, industrial, and automotive applications where reliable, low-current switching and amplification are required.
-45 V
-100 mA DC, -200 mA peak
SC-75 (SOT416) surface mount package
150°C maximum junction temperature
Minimum 220 at 2mA collector current, 5V VCE
RoHS3 compliant (unverified)