| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,010,000 pcs
|
3010000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC857BMTF is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and amplification applications in surface mount designs.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 45V, a continuous collector current (IC) rating of 100mA, and a power dissipation (Ptot) of 310mW. The device offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V VCE, with a transition frequency (fT) of 150MHz. Maximum collector-emitter saturation voltage is 650mV at 100mA collector current.
The transistor is housed in a SOT-23-3 surface mount package, also known as TO-236-3 or SC-59. It is rated for operation up to a maximum junction temperature of 150°C.
The BC857BMTF has a collector-emitter voltage (VCEO) rating of 45V.
The maximum continuous collector current (IC) is 100mA.
The total power dissipation (Ptot) is 310mW.
The BC857BMTF is available in a SOT-23-3 surface mount package, also known as TO-236-3 or SC-59.
The maximum junction temperature (TJ) is 150°C.
The minimum DC current gain (hFE) is 200 at a test condition of Ic=2mA and Vce=5V.
The BC857BMTF is listed as RoHS3 Compliant, but this information is unverified.