| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,669 pcs
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2669 pcs | On Request | 1 | On Request | On Request | 1830 | On Request | On Request |
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The NXP Semiconductors BC857BM,315 is a PNP bipolar junction transistor (BJT) suitable for automotive applications, indicated by its AEC-Q101 series designation. This component offers a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA.
With a power dissipation rating of 150mW, the BC857BM,315 operates efficiently within a temperature range of up to 150°C (TJ). Its DC current gain (hFE) is a minimum of 220 at 2mA and 5V. The transistor exhibits a collector-emitter saturation voltage of 400mV at 5mA collector current and 100mA base current. It also has a transition frequency of 100MHz.
The device is supplied in a compact SOT-883 surface-mount package, also referred to as SC-101. This packaging is suitable for automated assembly processes. The BC857BM,315 is designed for general-purpose applications within automotive electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 45V.
The operating temperature range is up to 150°C (TJ).
The BC857BM,315 is supplied in a SOT-883 surface-mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.