BC857BDW1T1G Dual PNP general purpose transistor from On Semiconductor. Rated for 45V VCEO, 100mA continuous collector current, and 380mW total power dissipation in a surface mount SOT-363 package.
Mfr Part #:

BC857BDW1T1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual PNP general purpose transistor from On Semiconductor. Rated for 45V VCEO, 100mA continuous collector current, and 380mW total power dissipation in a surface mount SOT-363 package.
✓ Total Stock: 180,492 pcs
$ Price Range: $0.05 - $0.21

BC857BDW1T1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised

BC857BDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC857BDW1T1G Description

Short technical summary and product information.

The BC857BDW1T1G is a dual PNP general purpose transistor from On Semiconductor, designed for low power surface mount amplifier applications. It features two matched PNP transistors in a compact SOT-363/SC-88 package.

 

Key electrical specifications include a maximum collector-emitter voltage of 45V, collector-base voltage of 50V, and continuous collector current of 100mA (200mA peak). The device offers a minimum DC current gain (hFE) of 220 at 2mA and 5V, with a typical transition frequency of 100MHz. Maximum Vce saturation voltage is 650mV at 5mA base current and 100mA collector current.

 

The total power dissipation is 380mW (250mW per device on FR-5 board), with a junction-to-ambient thermal resistance of 328°C/W. Operating and storage temperature range is -55°C to 150°C. The device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free. It is housed in a surface mount 6-TSSOP, SC-88, SOT-363 package with supplier device package SC-88/SC70-6/SOT-363.

BC857BDW1T1G Quick Information

Product Type: Bipolar Junction Transistor Array
Series: BC857BDW1T1G
Canonical Name: BC857BDW1T1G Dual PNP General Purpose Transistor
Subcategory: Dual PNP General Purpose Transistor

BC857BDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC857BDW1T1G Estimated Pricing

Qty Low High
1+ $0.21 $0.21
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC857BDW1T1G Features

  • Dual PNP transistor in SOT-363 package.
  • 45V maximum collector-emitter voltage.
  • 100mA continuous collector current rating.
  • 380mW total power dissipation capability.
  • RoHS3 compliant and halogen free.

BC857BDW1T1G Applications

  • General purpose amplifier circuits.
  • Low power switching applications.
  • Signal processing in portable devices.
  • Matched pair transistor applications.

BC857BDW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC857BDW1T1G?

The maximum VCEO is 45V.

What is the continuous collector current rating?

The maximum continuous collector current is 100mA, with a peak rating of 200mA.

What is the package type for this transistor?

It is available in a surface mount 6-TSSOP, SC-88, SOT-363 package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC857BDW1T1G RoHS compliant?

Yes, it is RoHS3 compliant.

What is the DC current gain (hFE) of this transistor?

The minimum hFE is 220 at Ic=2mA and Vce=5V.

What is the total power dissipation?

The maximum total power dissipation is 380mW (250mW per device on FR-5 board).

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