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BC856W,115 PNP general-purpose transistor with 65V collector-emitter voltage and 100mA collector current. Housed in a surface-mount SOT-323 (SC-70) package.
Mfr Part #:

BC856W,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
PNP general-purpose transistor with 65V collector-emitter voltage and 100mA collector current. Housed in a surface-mount SOT-323 (SC-70) package.
Total Stock: 398 pcs

BC856W,115 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
398 pcs
398 pcs On Request 1 On Request On Request 23+ On Request On Request

BC856W,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature Range
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Peak Collector Current
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
dc_current_gain (Minimum/Maximum @ Vce=-5 V, Ic=-2 mA)

BC856W,115 Description

Short technical summary and product information.

PNP general-purpose transistor in a very small SOT323 (SC-70) SMD plastic package. Designed for general-purpose switching and amplification applications.

 

Maximum collector-emitter voltage (VCEO) of -65 V, collector current up to -100 mA, peak current -200 mA. DC current gain (hFE) ranges from 125 to 475 at Vce=5V, Ic=2mA. Transition frequency typically 100 MHz.

 

Surface-mount SOT-323 package with gull-wing leads. Maximum power dissipation 200 mW at 25°C ambient. Operating junction temperature up to 150°C.

 

Suitable for general-purpose switching and amplification circuits. Low current and low voltage operation make it ideal for portable and battery-powered devices.

BC856W,115 Quick Information

Product Type: Bipolar (BJT) Transistor
Series: BC856W
Canonical Name: BC856W PNP General-Purpose Transistor
Subcategory: General Purpose Transistor

BC856W,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

BC856W,115 Features

  • PNP general-purpose transistor for switching and amplification.
  • Maximum collector-emitter voltage of -65 V.
  • Collector current rating of -100 mA.
  • Surface-mount SOT-323 (SC-70) package.
  • DC current gain range from 125 to 475.

BC856W,115 Applications

  • General-purpose switching circuits.
  • Signal amplification in low-power designs.
  • Battery-powered portable electronics.
  • Driver stages in audio circuits.

BC856W,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

-65 V maximum (VCEO).

What is the maximum collector current?

-100 mA DC, -200 mA peak.

What package is this transistor available in?

SOT-323 (SC-70) surface-mount package.

What is the operating temperature range?

Junction temperature up to 150°C, ambient range -65°C to 150°C.

Is this component RoHS compliant?

RoHS3 Compliant (unverified).

What is the DC current gain (hFE)?

125 to 475 at Vce=5V, Ic=2mA.

What is the transition frequency?

100 MHz typical.

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