| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,000 pcs
|
51000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Industrial Grade | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC856S is a dual PNP bipolar junction transistor manufactured by Yangzhou Yangjie Electronic Technology. It is housed in a compact SOT-363 surface mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a collector-emitter breakdown voltage of 65V, a maximum collector-base cutoff current of 15nA, and a minimum DC current gain of 110 at 2mA and 5V. The collector-emitter saturation voltage is limited to 650mV at 5mA base current and 100mA collector current. The device offers a transition frequency of 100MHz and a power dissipation of 200mW.
The operating junction temperature range is -55°C to 150°C, allowing use in a wide variety of environments. As a dual transistor array, it integrates two PNP transistors in one package, saving board space and simplifying layout in low-power amplifier and switching applications.
The collector-emitter breakdown voltage (VCEO) is 65V.
The BC856S is available in SOT-363 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The BC856S is reported as RoHS3 compliant, but this status is unverified.
The minimum DC current gain is 110 at Ic=2mA and Vce=5V.
The power dissipation is 200mW.
The transition frequency is 100MHz.