BC856BWT1G On Semiconductor BC856BWT1G is a PNP general purpose bipolar transistor designed for low-power surface-mount amplifier applications. Key ratings include -65V collector-emitter voltage and -100mA continuous collector current.
Mfr Part #:

BC856BWT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
On Semiconductor BC856BWT1G is a PNP general purpose bipolar transistor designed for low-power surface-mount amplifier applications. Key ratings include -65V collector-emitter voltage and -100mA continuous collector current.
✓ Total Stock: 515,856 pcs
$ Price Range: $0.03 - $0.29

BC856BWT1G Available from 5 distributors

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BC856BWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC856BWT1G Description

Short technical summary and product information.

The BC856BWT1G from On Semiconductor is a PNP general purpose transistor housed in the compact SC-70/SOT-323 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of -65V and continuous collector current of -100mA, with a peak current capability of -130mA (1 ms pulse). The device offers a DC current gain (hFE) of 220 to 475 at -10 mA collector current and -5V VCE, making it suitable for small-signal amplifier stages.

 

Power dissipation is rated at 150 mW on an FR-5 board at 25°C ambient, with a junction-to-ambient thermal resistance of 883°C/W. The operating and storage temperature range extends from -55°C to +150°C. The transistor is Pb-free, Halogen Free/BFR Free, and RoHS3 Compliant, and AEC-Q101 qualified automotive variants are available under the S and NSV prefixes.

BC856BWT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC856B
Canonical Name: On Semiconductor BC856BWT1G PNP General Purpose Transistor
Subcategory: Bipolar Transistor – Single PNP

BC856BWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC856BWT1G Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC856BWT1G Features

  • PNP general purpose bipolar transistor
  • -65V maximum collector-emitter voltage
  • -100mA continuous collector current
  • DC current gain (hFE) 220 to 475
  • RoHS3 compliant and Pb-free

BC856BWT1G Applications

  • General purpose amplifier stages
  • Low-power surface-mount designs
  • Small-signal switching circuits
  • Automotive (AEC-Q101 variant available)

BC856BWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC856BWT1G?

The maximum collector-emitter voltage (VCEO) is -65V.

What is the continuous collector current rating?

The continuous collector current is -100mA, with a peak of -130mA (1 ms pulse).

What is the operating temperature range of this transistor?

The operating temperature range is -55°C to +150°C (junction and storage).

What package does the BC856BWT1G use?

It is housed in an SC-70/SOT-323 surface-mount package (supplier device package SC-70-3 SOT323).

Is the BC856BWT1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-free, and Halogen Free/BFR Free as stated in the datasheet.

What is the DC current gain (hFE) of this device?

At Ic=2mA, Vce=5V, hFE is minimum 220. At Ic=-10mA, Vce=-5V, hFE ranges from 220 to 475 for the BC856B variant.

What are the recommended applications?

General purpose amplifier applications in low-power surface-mount circuits. Automotive versions are also available.

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