BC856BWE6327 The BC856BWE6327 is a PNP silicon AF transistor from Infineon Technologies. It features a 65V collector-emitter voltage, 100mA collector current, and 330mW power dissipation in a surface-mount SOT-323 package.
Mfr Part #:

BC856BWE6327

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BC856BWE6327 is a PNP silicon AF transistor from Infineon Technologies. It features a 65V collector-emitter voltage, 100mA collector current, and 330mW power dissipation in a surface-mount SOT-323 package.
Total Stock: 4,770 pcs

BC856BWE6327 Available from 2 distributors

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BC856BWE6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Peak Collector Current
Power
Storage Temperature Range
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-Soldering Point
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC856BWE6327 Description

Short technical summary and product information.

The BC856BWE6327 is a PNP silicon AF transistor designed for audio frequency input stages and driver applications. Manufactured by Infineon Technologies, this device offers high current gain and low collector-emitter saturation voltage, making it suitable for general-purpose amplification and switching.

 

Key electrical specifications include a collector-emitter voltage (VCEO) of 65V, collector-base voltage (VCBO) of 80V, and a continuous collector current rating of 100mA with a peak capability of 200mA. The DC current gain (hFE) ranges from 220 to 475 at 2mA, with a typical value of 290. The transistor also features a transition frequency of 250 MHz and low noise performance between 30 Hz and 15 kHz.

 

The device is housed in a surface-mount SC-70 (SOT-323) package with the supplier device package designation PG-SOT323-3-1. It is rated for a maximum junction temperature of 150°C and has a storage temperature range of -65°C to +150°C. The BC856BWE6327 is complementary to NPN types BC846...BC850...

BC856BWE6327 Quick Information

Product Type: Bipolar Transistor
Canonical Name: Infineon Technologies BC856BWE6327 PNP Silicon AF Transistor
Subcategory: Single Bipolar Junction Transistor

BC856BWE6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BC856BWE6327 Features

  • PNP silicon AF transistor for general purpose.
  • 65V collector-emitter voltage rating.
  • 100mA continuous collector current capability.
  • High DC current gain up to 475.
  • Surface-mount SOT-323 package.

BC856BWE6327 Applications

  • Ideal for AF input stage circuits.
  • Suitable for driver applications.
  • Used in general purpose switching.
  • Complementary to NPN BC846 series.

BC856BWE6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the BC856BWE6327?

The collector-emitter voltage (VCEO) is 65 V.

What is the maximum collector current for this transistor?

The continuous collector current is 100 mA, with a peak current of 200 mA (tp ≤ 10 ms).

What is the package type for the BC856BWE6327?

The device is available in a surface-mount SC-70 (SOT-323) package, specifically the PG-SOT323-3-1.

What is the operating temperature range for this transistor?

The maximum junction temperature (TJ) is 150°C, and the storage temperature range is -65°C to +150°C.

Is the BC856BWE6327 RoHS compliant?

Yes, the datasheet confirms the package is Pb-free (RoHS compliant).

What is the DC current gain (hFE) of the BC856BWE6327?

The DC current gain ranges from 220 minimum to 475 maximum, with a typical value of 290, measured at Ic=2mA and Vce=5V.

What is the transition frequency of this transistor?

The transition frequency (fT) is 250 MHz.

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