| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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47,536 pcs
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47536 pcs | On Request | 1 | On Request | On Request | 10+13+ | On Request | On Request | |
|
895 pcs
|
895 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BC856BW is a PNP bipolar junction transistor (BJT) suitable for general-purpose switching and amplification tasks. It is housed in a compact SOT-323 plastic package, making it ideal for space-constrained applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 65V and a maximum continuous collector current (IC) of 100mA. The transistor offers a DC current gain (hFE) ranging from 220 to 475 under typical test conditions (IC = -2 mA; VCE = -5 V).
This device operates within a wide temperature range, from -65°C to +150°C. The SOT-323 package is designed for surface mounting, facilitating automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC856BW is 65V.
The maximum continuous collector current (IC) for the BC856BW is 100mA.
The BC856BW transistor is supplied in a SOT-323 plastic package.
The operating ambient temperature range for the BC856BW is -65°C to +150°C.
The DC current gain (hFE) for the BC856BW is typically between 220 and 475 when measured at IC = -2 mA and VCE = -5 V.