| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,616,000 pcs
|
3616000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC856BMTF is a PNP bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose amplification and switching applications in surface-mount designs.
Key electrical specifications include a collector-emitter breakdown voltage (VCEO) of 65 V, a collector current (IC) rating of 100 mA, and a power dissipation (PD) of 310 mW. The device offers a minimum DC current gain (hFE) of 200 at 2 mA collector current and 5 V collector-emitter voltage. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 650 mV at a base current of 5 mA and collector current of 100 mA. The transition frequency (fT) is 150 MHz.
The transistor is housed in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59. It is suitable for automated assembly processes and space-constrained PCB layouts.
The collector-emitter breakdown voltage (VCEO) is 65 V.
The maximum collector current (IC) is 100 mA.
The power dissipation (PD) is 310 mW.
The BC856BMTF is available in a surface-mount SOT-23-3 package, also known as TO-236-3 or SC-59.
The maximum junction operating temperature (TJ) is 150 °C.
The BC856BMTF is listed as RoHS3 Compliant.