| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
688 pcs
|
688 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC856BLT3G is a PNP silicon general purpose transistor from onsemi's BC856ALT1G series. It features a collector-emitter breakdown voltage of -65V, collector-base breakdown voltage of -80V, and emitter-base breakdown voltage of -5.0V. The device supports a continuous collector current of -100mA with a peak rating of -200mA, making it suitable for general purpose switching and amplification applications.
Electrical characteristics include a minimum DC current gain (hFE) of 220 at Ic=2mA and Vce=5V, a maximum collector-emitter saturation voltage of 650mV at Ib=5mA and Ic=100mA, and a transition frequency of 100MHz. Power dissipation is rated at 300mW on an alumina substrate and 225mW on FR-5 board, with corresponding thermal resistance values of 417°C/W and 556°C/W respectively.
The device operates over a junction temperature range of -55°C to +150°CUTE. It is packaged in a surface mount SOT-23-3 (TO-236) package, suitable for compact PCB designs. The BC856BLT3G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, supporting environmentally conscious manufacturing requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.12 | $0.12 |
| 10+ | $0.08 | $0.08 |
| 100+ | $0.05 | $0.05 |
| 500+ | $0.03 | $0.03 |
| 1,000+ | $0.03 | $0.03 |
| 5,000+ | $0.02 | $0.02 |
| 10,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is -65V.
The maximum continuous collector current (IC) is -100mA, with a peak rating of -200mA.
Power dissipation is 300mW on an alumina substrate and 225mW on an FR-5 board.
The junction operating temperature range is -55°C to +150°C.
The device is available in a surface mount SOT-23-3 (TO-236) package.
Yes, the device is RoHS compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.
The minimum DC current gain (hFE) is 220 at Ic=2mA and Vce=5V.