BC856BLT1G BC856BLT1G is a PNP general purpose transistor from onsemi. It features a collector-emitter breakdown voltage of -65 V, continuous collector current of -100 mA, and a transition frequency of 100 MHz.
Mfr Part #:

BC856BLT1G

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC856BLT1G is a PNP general purpose transistor from onsemi. It features a collector-emitter breakdown voltage of -65 V, continuous collector current of -100 mA, and a transition frequency of 100 MHz.
✓ Total Stock: 1,894,862 pcs
$ Price Range: $0.03 - $0.24

BC856BLT1G Available from 8 distributors

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✓ Non-Authorised

BC856BLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC856BLT1G Description

Short technical summary and product information.

The BC856BLT1G is a PNP silicon general purpose transistor from onsemi, part of the BC856ALT1G series. It is designed for general purpose switching and amplification applications.

 

Key electrical specifications include a minimum collector-emitter breakdown voltage of -65 V, a minimum collector-base breakdown voltage of -80 V, and a continuous collector current rating of -100 mA. The DC current gain (hFE) is a minimum of 220 at 2 mA collector current and 5 V collector-emitter voltage. The transition frequency (fT) is 100 MHz.

 

The device is offered in a surface mount SOT-23-3 (TO-236) package. Power dissipation is 225 mW on an FR-5 board and 300 mW on an alumina substrate at 25°C ambient temperature. The operating junction temperature range is -55°C to 150°C.

BC856BLT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC856ALT1G Series
Canonical Name: BC856BLT1G PNP General Purpose Transistor
Subcategory: Single PNP

BC856BLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC856BLT1G Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.10 $0.10
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC856BLT1G Features

  • PNP silicon general purpose transistor.
  • Collector-emitter breakdown voltage of -65 V.
  • Continuous collector current rating of -100 mA.
  • Transition frequency of 100 MHz.
  • Surface mount SOT-23-3 (TO-236) package.

BC856BLT1G Applications

  • General purpose switching and amplification.
  • Suitable for low-power signal processing.
  • Used in portable and battery-powered devices.
  • Ideal for surface mount PCB assembly.

BC856BLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the BC856BLT1G?

The minimum collector-emitter breakdown voltage (VCEO) is -65 V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is -100 mA.

What is the package type for the BC856BLT1G?

The device is offered in a surface mount SOT-23-3 (TO-236) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC856BLT1G RoHS compliant?

The datasheet states the device is RoHS compliant and Pb-Free.

What is the transition frequency of this transistor?

The transition frequency (fT) is 100 MHz.

What is the DC current gain (hFE) of the BC856BLT1G?

The minimum DC current gain (hFE) is 220 at a test condition of Ic=2 mA and Vce=5 V.

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