| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,992 pcs
|
12992 pcs | On Request | 1 | On Request | On Request | 1505 | On Request | On Request | |
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC856BDW1T3G is a dual PNP general purpose transistor from onsemi, designed for low power surface mount amplifier applications. It features two matched PNP transistors in a single SC-88/SC70-6/SOT-363 package. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 65V, collector-base voltage (VCBO) of 80V, and continuous collector current of 100mA (200mA peak). Total device power dissipation is 380mW with a derating of 3.0mW/°C above 25°C. DC current gain (hFE) ranges from 220 minimum to 475 maximum at Vce=5V, Ic=2mA, with a typical value of 290. Typical VCE(sat) is 250mV at 100mA. Transition frequency is 100MHz. The device operates over a junction temperature range of -55°C to 150°C. The package is surface mount and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.21 | $0.21 |
| 10+ | $0.13 | $0.13 |
| 100+ | $0.08 | $0.08 |
| 500+ | $0.06 | $0.06 |
| 1,000+ | $0.05 | $0.05 |
| 10,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum VCEO is 65V.
6-TSSOP, SC-88, SOT-363 surface mount package.
-55°C to 150°C (junction).
Yes, RoHS3 compliant per existing data.
220 min, 290 typ, 475 max at Vce=5V, Ic=2mA.
100mA continuous, 200mA peak.
380mW total device dissipation.