BC856BDW1T3G Dual PNP general purpose transistor in SC-88/SC70-6 surface mount package. Rated for 65V collector-emitter voltage and 100mA continuous collector current.
Mfr Part #:

BC856BDW1T3G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual PNP general purpose transistor in SC-88/SC70-6 surface mount package. Rated for 65V collector-emitter voltage and 100mA continuous collector current.
✓ Total Stock: 44,012 pcs
$ Price Range: $0.05 - $0.21

BC856BDW1T3G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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21,020 pcs
21020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
12,992 pcs
12992 pcs On Request 1 On Request On Request 1505 On Request On Request
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10,000 pcs
10000 pcs On Request 1 On Request On Request On Request On Request On Request

BC856BDW1T3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC856BDW1T3G Description

Short technical summary and product information.

The BC856BDW1T3G is a dual PNP general purpose transistor from onsemi, designed for low power surface mount amplifier applications. It features two matched PNP transistors in a single SC-88/SC70-6/SOT-363 package. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 65V, collector-base voltage (VCBO) of 80V, and continuous collector current of 100mA (200mA peak). Total device power dissipation is 380mW with a derating of 3.0mW/°C above 25°C. DC current gain (hFE) ranges from 220 minimum to 475 maximum at Vce=5V, Ic=2mA, with a typical value of 290. Typical VCE(sat) is 250mV at 100mA. Transition frequency is 100MHz. The device operates over a junction temperature range of -55°C to 150°C. The package is surface mount and RoHS compliant.

BC856BDW1T3G Quick Information

Product Type: Bipolar Transistor Array
Series: BC856BDW1T1G
Canonical Name: BC856BDW1T3G Dual PNP General Purpose Transistor
Subcategory: Dual PNP Array

BC856BDW1T3G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC856BDW1T3G Estimated Pricing

Qty Low High
1+ $0.21 $0.21
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.06 $0.06
1,000+ $0.05 $0.05
10,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC856BDW1T3G Features

  • Dual PNP transistors in one package.
  • Rated for 65V collector-emitter voltage.
  • 100mA continuous collector current.
  • Surface mount SC-88/SC70-6 package.
  • RoHS compliant and Pb-Free.

BC856BDW1T3G Applications

  • General purpose amplifier circuits.
  • Low power switching applications.
  • Signal processing in portable devices.
  • Audio preamplifier stages.

BC856BDW1T3G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

Maximum VCEO is 65V.

What package does the BC856BDW1T3G come in?

6-TSSOP, SC-88, SOT-363 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the BC856BDW1T3G RoHS compliant?

Yes, RoHS3 compliant per existing data.

What is the DC current gain (hFE)?

220 min, 290 typ, 475 max at Vce=5V, Ic=2mA.

What is the maximum collector current?

100mA continuous, 200mA peak.

What is the power dissipation?

380mW total device dissipation.

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