BC856BDW1T1G Dual PNP general purpose transistor from onsemi. Rated for -65V VCEO and -100mA continuous collector current in a compact SOT-363 surface mount package.
Mfr Part #:

BC856BDW1T1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual PNP general purpose transistor from onsemi. Rated for -65V VCEO and -100mA continuous collector current in a compact SOT-363 surface mount package.
✓ Total Stock: 283,276 pcs
$ Price Range: $0.04 - $0.21

BC856BDW1T1G Available from 6 distributors

✓ Authorised
✓ Non-Authorised

BC856BDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC856BDW1T1G Description

Short technical summary and product information.

The BC856BDW1T1G is a dual PNP bipolar junction transistor from onsemi designed for general purpose amplifier and switching applications. It features a maximum collector-emitter voltage of -65V and a continuous collector current rating of -100mA, with a peak current capability of -200mA.

 

This device offers a minimum DC current gain (hFE) of 220 at 2mA collector current, ensuring consistent amplification performance. The maximum collector-emitter saturation voltage is 650mV at 100mA, supporting efficient low-voltage switching. With a transition frequency of 100MHz, it is suitable for moderate-speed signal processing.

 

The transistor is housed in a 6-pin SOT-363/SC-88 surface mount package, enabling compact PCB designs. Total power dissipation is 380mW on an FR-5 board at 25°C, with a junction-to-ambient thermal resistance of 328°C/W. The operating junction temperature range spans -55°C to 150°C.

 

The BC856BDW1T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for environmentally conscious designs.

BC856BDW1T1G Quick Information

Product Type: Bipolar Junction Transistor (BJT) Array
Series: BC856BDW1T1G
Canonical Name: BC856BDW1T1G Dual PNP General Purpose Transistor
Subcategory: PNP Dual Array

BC856BDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC856BDW1T1G Estimated Pricing

Qty Low High
1+ $0.21 $0.21
10+ $0.13 $0.13
100+ $0.08 $0.08
500+ $0.06 $0.06
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC856BDW1T1G Features

  • Dual PNP transistor in SOT-363 package.
  • Maximum collector-emitter voltage of -65V.
  • Continuous collector current rating of -100mA.
  • Minimum DC current gain of 220.
  • RoHS3 compliant and Pb-Free construction.

BC856BDW1T1G Applications

  • General purpose amplifier and switching circuits.
  • Signal processing in consumer electronics.
  • Low-power portable device designs.
  • Automotive grade variant available (SBC856BDW1T1G).

BC856BDW1T1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the BC856BDW1T1G?

The maximum collector-emitter voltage (VCEO) is -65V.

What is the continuous collector current rating?

The continuous collector current (IC) is -100mA, with a peak rating of -200mA.

What package is the BC856BDW1T1G available in?

It is available in a 6-TSSOP, SC-88, SOT-363 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC856BDW1T1G RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.

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