| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,920 pcs
|
2920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC856BDW1T1 is a dual PNP general purpose transistor from onsemi, designed for low power surface mount applications. It is housed in the compact SOT-363/SC-88 package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 65V, a maximum collector-base voltage (VCBO) of 80V, and a continuous collector current rating of 100mA. The device offers a typical DC current gain (hFE) of 290 at IC = -2mA and VCE = -5V, with a transition frequency of 100MHz.
The total device power dissipation is 380mW at 25°C ambient temperature, with a derating factor of 3.0 mW/°C above 25°C. The operating junction temperature range is -55°C to 150°C.
This dual transistor is suitable for general purpose amplifier and switching applications where space is limited. The surface mount SOT-363 package enables compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 15,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 65V.
The BC856BDW1T1 is available in a 6-TSSOP, SC-88, SOT-363 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The BC856BDW1T1 is listed as RoHS3 Compliant, though this data is unverified.
The typical DC current gain (hFE) is 290 at IC = -2mA and VCE = -5V.
The maximum continuous collector current is 100mA.
The maximum total device power dissipation is 380mW.