BC856ALT1G The BC856ALT1G is a PNP general purpose transistor from onsemi. It features a maximum collector-emitter voltage of -65V, continuous collector current of -100mA, and a transition frequency of 100MHz.
Mfr Part #:

BC856ALT1G

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC856ALT1G is a PNP general purpose transistor from onsemi. It features a maximum collector-emitter voltage of -65V, continuous collector current of -100mA, and a transition frequency of 100MHz.
Total Stock: 228,275 pcs
$ Price Range: $0.03 - $0.24

BC856ALT1G Available from 6 distributors

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Non-Authorised

BC856ALT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector Current - Peak (Max)
Collector-Base Voltage (Max)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (Max)
Frequency
Halogen Free
Industrial Grade
Lead Count
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power
Power Dissipation (Max) on FR-5
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Thermal Resistance (Junction-to-Ambient, Alumina)
Thermal Resistance, Junction-to-Ambient (FR-5)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC856ALT1G Description

Short technical summary and product information.

The BC856ALT1G is a PNP silicon general purpose transistor manufactured by onsemi. It is designed for general purpose switching and amplification applications.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of -65V, a maximum collector-base voltage (VCBO) of -80V, and a continuous collector current (IC) of -100mA. The device offers a DC current gain (hFE) range of 125 to 250 at -2mA collector current and -5V collector-emitter voltage. The typical transition frequency (fT) is 100MHz.

 

The transistor is housed in a surface mount SOT-23 (TO-236) package with a gull wing lead form. It is rated for operation over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 300mW on an alumina substrate and 225mW on an FR-5 board.

BC856ALT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC856ALT1G
Canonical Name: BC856ALT1G PNP General Purpose Transistor
Subcategory: Single PNP

BC856ALT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC856ALT1G Estimated Pricing

Qty Low High
1+ $0.24 $0.24
10+ $0.10 $0.10
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC856ALT1G Features

  • PNP silicon general purpose transistor.
  • Maximum collector-emitter voltage of -65V.
  • Continuous collector current of -100mA.
  • Transition frequency of 100MHz typical.
  • Surface mount SOT-23 (TO-236) package.

BC856ALT1G Applications

  • General purpose switching circuits.
  • Signal amplification applications.
  • Low power audio amplification.
  • Driver stages in electronic circuits.

BC856ALT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC856ALT1G?

The maximum collector-emitter voltage (VCEO) is -65V.

What is the package type for the BC856ALT1G?

The BC856ALT1G is housed in a surface mount SOT-23 (TO-236) package.

What is the operating temperature range of the BC856ALT1G?

The operating junction temperature range is -55°C to 150°C.

Is the BC856ALT1G RoHS compliant?

Yes, the BC856ALT1G is RoHS compliant, Pb-Free, and Halogen Free/BFR Free as stated in the datasheet.

What is the DC current gain (hFE) of the BC856ALT1G?

The DC current gain (hFE) is 125 to 250 at Ic = -2mA and Vce = -5V.

What is the maximum collector current for the BC856ALT1G?

The maximum continuous collector current (IC) is -100mA, with a peak current of -200mA.

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