| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,175 pcs
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1175 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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933 pcs
|
933 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC856 from NXP Semiconductors is a PNP general-purpose transistor housed in a compact SOT-23 surface-mount package. This device offers a collector-emitter breakdown voltage of 65V and a continuous collector current rating of up to 100mA. Its typical gain bandwidth product is 150MHz, with a minimum of 100MHz, making it suitable for various signal amplification and switching tasks.
The operating temperature range for the BC856 is from -65°C to +150°C, and it has a maximum power dissipation of 250mW. The transistor is designed for SMD mounting, facilitating automated assembly processes. Key electrical characteristics include a minimum DC current gain of 125 and a collector-emitter saturation voltage of -300mV.
This component is classified under discrete semiconductor products, specifically within the Bipolar (BJT) - Single, Pre-Biased category. Its specifications make it a versatile choice for designers working on a wide array of electronic circuits requiring a reliable PNP transistor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 65V.
The maximum continuous collector current is 100mA.
The typical gain bandwidth product is 150MHz.
The operating temperature range is -65°C to +150°C.
The BC856 is supplied in a SOT-23 package.