| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70,020 pcs
|
70020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature | |
| Thermal Resistance |
The NXP Semiconductors BC850CW115 is an NPN general purpose transistor suitable for low noise stages in audio-frequency equipment. It features a low current capability of up to 100 mA and a low voltage rating of up to 45 V.
This transistor is housed in a compact SOT-323 plastic package, making it ideal for surface mount applications where space is limited. The datasheet specifies a collector-emitter saturation voltage of 250 mV at 10 mA and a transition frequency of 100 MHz at 10 mA.
Key electrical characteristics include a DC current gain ranging from 200 to 450 for the BC850BW/BC850BW variants and 420 to 800 for the BC850CW/BC850CW variants. The operating ambient temperature range is -65 °C to +150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 45 V.
The BC850CW115 is available in a SOT-323 surface-mount package.
The operating ambient temperature range is -65°C to +150°C.
The DC current gain (hFE) ranges from 200 to 450 at IC=2 mA and VCE=5 V.
The transition frequency (fT) is minimum 100 MHz at IC=10 mA and VCE=5 V.
The noise figure is maximum 4 dB at IC=200 µA, VCE=5 V, RS=2 kΩ, f=10 Hz to 15.7 kHz.
The maximum DC collector current is 100 mA.