BC850CLT1G NPN silicon bipolar transistor with 45V collector-emitter voltage and 100mA collector current. Designed for general purpose amplification and switching in surface mount applications.
Mfr Part #:

BC850CLT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN silicon bipolar transistor with 45V collector-emitter voltage and 100mA collector current. Designed for general purpose amplification and switching in surface mount applications.
Total Stock: 64,834 pcs
$ Price Range: $0.02 - $0.23

BC850CLT1G Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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61,020 pcs
61020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,367 pcs
2367 pcs On Request 1 On Request On Request 21+ On Request On Request
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1,447 pcs
1447 pcs On Request 1 On Request On Request On Request On Request On Request

BC850CLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC850CLT1G Description

Short technical summary and product information.

The BC850CLT1G is an NPN silicon bipolar junction transistor from onsemi, designed for general purpose amplification and switching. It features a maximum collector-emitter voltage (VCEO) of 45V and a maximum collector current (IC) of 100mA. The device offers a minimum DC current gain (hFE) of 420 at Ic=2mA, Vce=5V, and a typical transition frequency (ft) of 100MHz, making it suitable for low-power signal processing. The maximum Vce saturation voltage is 600mV at Ib=5mA, Ic=100mA, ensuring efficient switching. The transistor is housed in a surface mount SOT-23-3 package (also TO-236-3, SC-59) and supports an operating junction temperature range of -55°C to 150°C. Power dissipation is rated at 225mW on FR-5 board at 25°C. Per the datasheet, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant, with a Moisture Sensitivity Level (MSL) of 1 (unlimited).

BC850CLT1G Quick Information

Product Type: Bipolar Transistor (BJT) - Single
Series: BC850
Canonical Name: BC850CLT1G NPN Bipolar Transistor, 45V VCEO, 100mA, SOT-23-3
Subcategory: Single NPN

BC850CLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC850CLT1G Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.10 $0.10
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.04 $0.04
3,000+ $0.03 $0.03
6,000+ $0.02 $0.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC850CLT1G Features

  • NPN silicon bipolar junction transistor.
  • Maximum collector-emitter voltage 45V.
  • Maximum collector current 100mA.
  • DC current gain (hFE) minimum 420.
  • Surface mount SOT-23-3 package.

BC850CLT1G Applications

  • General purpose amplification circuits.
  • Switching applications up to 100mA.
  • Low power consumer electronics.
  • Signal processing in audio equipment.

BC850CLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC850CLT1G?

45V.

What is the package type of the BC850CLT1G?

SOT-23-3 (also TO-236-3, SC-59).

What is the operating temperature range of the BC850CLT1G?

-55°C to 150°C (junction).

Is the BC850CLT1G RoHS compliant?

Yes, according to the datasheet it is RoHS compliant.

What is the DC current gain (hFE) of the BC850CLT1G?

Minimum 420 at Ic=2mA, Vce=5V.

What is the transition frequency (ft) of the BC850CLT1G?

100 MHz typical.

What is the maximum collector current of the BC850CLT1G?

100 mA.

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