| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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241 pcs
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241 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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215 pcs
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215 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC850C from NXP Semiconductors is an NPN bipolar junction transistor (BJT) suitable for general-purpose switching and amplification tasks. It is housed in a compact SOT23 surface-mounted device (SMD) plastic package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V and a continuous collector current (IC) of up to 100mA. The DC current gain (hFE) is typically 450 under specific test conditions (VCE = 5V, IC = 10µA, Tj = 25°C). Other limiting values include a collector-base voltage (VCBO) of 50V and an emitter-base voltage (VEBO) of 5V.
This transistor operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of 250mW at an ambient temperature of 25°C when mounted on an FR4 PCB. The thermal resistance from junction to ambient (Rth(j-a)) is 500 K/W.
The BC850C is a complementary PNP transistor to the BC860C. Its small package size and general-purpose nature make it suitable for a wide range of electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC850C transistor is 45V.
The maximum continuous collector current (IC) for the BC850C transistor is 100mA.
The typical DC current gain (hFE) of the BC850C transistor at VCE = 5V and IC = 10µA is 450.
The BC850C transistor is supplied in a SOT23 plastic surface-mounted package.
The operating temperature range for the BC850C transistor is -65°C to 150°C.