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295 pcs
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295 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BC850BWH6327 is a single NPN bipolar junction transistor (BJT) housed in a compact SOT-323 surface mount package. This component is designed for various electronic applications requiring a reliable switching or amplification element.
Key electrical specifications include a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 0.1A. It operates with a minimum hFE of 110 and offers a frequency response up to 250 MHz. The transistor has a maximum power dissipation of 330 mW, with a typical power dissipation of 250 mW.
With a maximum operating temperature of 150℃, the BC850BWH6327 is suitable for a range of environmental conditions. The SOT-323 package is ideal for space-constrained PCB designs, and its surface mount style facilitates automated assembly processes. The dimensions of the package are 2mm in length, 1.25mm in width, and 0.8mm in height.
This transistor is RoHS compliant and lead-free, aligning with modern environmental standards for electronic components.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (Collector to Emitter) for the BC850BWH6327 is 45 V.
The maximum continuous collector current for this transistor is 0.1A.
The minimum hFE value is 110.
The maximum operating temperature is 150 ℃.
The BC850BWH6327 is supplied in a SOT-323 package.
The BC850BWH6327 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.