| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
714 pcs
|
714 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type |
The BC850B,215 is an NPN bipolar transistor manufactured by NXP Semiconductors. It is designed for applications requiring a collector-emitter voltage of up to 45V and a maximum collector current of 0.1A. The transistor has a power dissipation rating of 250mW.
This component is housed in a SOT23 surface-mount package, suitable for automated assembly processes. The current gain typically ranges from 200 to 450, with a typical operating frequency of 100MHz. These specifications make the BC850B,215 suitable for various general-purpose amplification and switching tasks in electronic circuits.
Its SMD mounting type facilitates integration into compact designs. The transistor is supplied on a 7-inch reel, compatible with standard tape and reel handling equipment for high-volume manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 45V.
The maximum collector current is 0.1A.
The power dissipation is 250mW.
The typical current gain ranges from 200 to 450.
The BC850B,215 transistor is supplied in a SOT23, TO236AB case.