BC849CLT1G BC849CLT1G is an NPN silicon general purpose transistor rated at 30V collector-emitter voltage and 100mA continuous collector current in a SOT-23-3 surface mount package.
Mfr Part #:

BC849CLT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC849CLT1G is an NPN silicon general purpose transistor rated at 30V collector-emitter voltage and 100mA continuous collector current in a SOT-23-3 surface mount package.
Total Stock: 410,952 pcs
$ Price Range: $0.03 - $0.12

BC849CLT1G Available from 4 distributors

Authorised
Non-Authorised

BC849CLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Package Type
Power
Power Dissipation (Maximum @ Alumina Substrate, TA = 25 °C)
Power Dissipation (Maximum @ FR -5 Board, TA = 25 °C)
Supplier Device Package
Tape & Reel
Thermal Resistance Junction To Ambient (Typical @ Alumina substrate)
Thermal Resistance Junction To Ambient (Typical @ FR -5 board)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC849CLT1G Description

Short technical summary and product information.

The BC849CLT1G is an NPN silicon general purpose transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device offers a minimum DC current gain of 420 at 2 mA collector current and 5 V collector-emitter voltage, and a typical transition frequency of 100 MHz.

 

For thermal management, the transistor dissipates up to 225 mW on FR-5 board material and up to 300 mW on an alumina substrate at 25°C ambient temperature. The operating junction temperature range is -55°C to +150°C. Thermal resistance junction-to-ambient is 556 °C/W on FR-5 board and 417 °C/W on alumina substrate.

 

The BC849CLT1G is supplied in a SOT-23-3 (TO-236) surface mount package. The device is Pb-free, Halogen Free/BFR Free, and RoHS compliant per the datasheet. Moisture Sensitivity Level is 1 (unlimited).

BC849CLT1G Quick Information

Product Type: Bipolar Transistor (BJT)
Series: BC849CLT1G
Canonical Name: BC849CLT1G NPN Silicon General Purpose Transistor
Subcategory: NPN

BC849CLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BC849CLT1G Estimated Pricing

Qty Low High
1+ $0.12 $0.12
10+ $0.07 $0.07
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC849CLT1G Features

  • NPN silicon general purpose transistor.
  • 30V maximum collector-emitter voltage.
  • 100mA maximum continuous collector current.
  • Minimum DC current gain of 420.
  • Surface mount SOT-23-3 package.

BC849CLT1G Applications

  • General purpose switching and amplification.
  • Signal processing in low-power circuits.
  • Driver stage in audio amplifiers.
  • Interface circuits for logic signals.

BC849CLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC849CLT1G?

The maximum collector-emitter voltage (VCEO) is 30 V.

What is the maximum continuous collector current?

The maximum continuous collector current is 100 mA.

What package does the BC849CLT1G come in?

The device comes in a surface mount SOT-23-3 (TO-236) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the BC849CLT1G RoHS compliant?

The datasheet states the device is RoHS compliant, Pb-Free, and Halogen Free/BFR Free. Note that compliance data is unverified.

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