| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,134 pcs
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1134 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BC849C is an NPN bipolar junction transistor (BJT) designed for general purpose switching and amplification applications. It is housed in a compact SOT23 surface-mounted device (SMD) plastic package.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30 V and a maximum collector current (IC) of 100 mA. The DC current gain (hFE) is typically 450 at VCE = 5 V and IC = 10 µA, with a range of 420 to 800 at VCE = 5 V and IC = 2 mA. The transistor also features a maximum collector-base voltage (VCBO) of 30 V and a maximum emitter-base voltage (VEBO) of 5 V.
This AEC-Q101 qualified component is suitable for various electronic circuits requiring reliable switching or amplification. Its small SOT23 package makes it ideal for space-constrained designs. The device operates within a junction temperature range of -65 °C to 150 °C and has a total power dissipation of 250 mW at an ambient temperature of 25 °C when mounted on an FR4 PCB.
PNP complement is BC859C. The marking code for the BC849C is 2C%.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC849C is 30 V.
The maximum collector current (IC) for the BC849C is 100 mA.
The DC current gain (hFE) is typically 450 at VCE = 5 V and IC = 10 µA, and ranges from 420 to 800 at VCE = 5 V and IC = 2 mA.
The BC849C is available in a SOT23 plastic surface-mounted package.
Yes, the BC849C is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BC849C is 1.
The REACH status for the BC849C is Unaffected.