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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC849B,235 from NXP Semiconductors is a single NPN bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact TO-236AB (SOT-23) surface-mount package, making it ideal for space-constrained designs.
Key electrical characteristics include a collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA. The transistor offers a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V Vce. Its Vce saturation is specified at a maximum of 600mV when operating at 5mA base current and 100mA collector current. The cutoff current (ICBO) is a low 15nA.
With a maximum power dissipation of 250mW and a transition frequency of 100MHz, the BC849B,235 is designed for general-purpose amplification and switching applications. It operates within a temperature range of -55°C to 150°C (TJ).
The component is mounted using a surface mount technique. The SOT-23 package is widely used in consumer electronics, industrial controls, and telecommunications equipment.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BC849B,235 is an NPN transistor.
The maximum collector current (Ic) for the BC849B,235 is 100mA.
The maximum collector-emitter breakdown voltage (Vce) for the BC849B,235 is 30V.
The maximum Vce saturation is 600mV, measured at 5mA Ib and 100mA Ic.
The minimum DC current gain (hFE) is 200, measured at 2mA Ic and 5V Vce.
The maximum power dissipation for the BC849B,235 is 250mW.
The maximum operating junction temperature (TJ) for the BC849B,235 is 150°C.
The BC849B,235 is available in TO-236-3, SC-59, and SOT-23-3 packages. The supplier device package is TO-236AB.