BC848CWT1G NPN general purpose transistor rated for 30V collector-emitter voltage and 100mA continuous collector current. Housed in a surface-mount SC-70-3 (SOT-323) package.
Mfr Part #:

BC848CWT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN general purpose transistor rated for 30V collector-emitter voltage and 100mA continuous collector current. Housed in a surface-mount SC-70-3 (SOT-323) package.
Total Stock: 19,020 pcs
$ Price Range: $0.04 - $0.19

BC848CWT1G Available from 1 distributor

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BC848CWT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
SVHC Present
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC848CWT1G Description

Short technical summary and product information.

The BC848CWT1G is an NPN silicon general purpose transistor from onsemi, designed for low power surface mount amplifier applications. It is part of the BC848 series and offers a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current rating of 100mA.

 

This device features a high DC current gain (hFE) of 420 minimum at 5V Vce and 2mA Ic, making it suitable for signal amplification stages. The transition frequency is typically 100MHz. The maximum power dissipation is 150mW, with the datasheet noting 200mW on an FR-5 board.

 

The BC848CWT1G is supplied in the SC-70 (SOT-323) surface-mount package, which is designed for compact, low-power applications. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

BC848CWT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC848C
Canonical Name: BC848CWT1G NPN General Purpose Transistor
Subcategory: Single NPN

BC848CWT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC848CWT1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC848CWT1G Features

  • NPN silicon general purpose transistor.
  • Rated for 30V collector-emitter voltage.
  • 100mA continuous collector current.
  • High DC current gain of 420 minimum.
  • Surface mount SC-70-3 (SOT-323) package.

BC848CWT1G Applications

  • General purpose amplifier applications.
  • Low power surface mount circuits.
  • Signal amplification stages.
  • Switching applications up to 100mA.

BC848CWT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC848CWT1G?

The maximum collector-emitter voltage (VCEO) is 30V.

What is the maximum continuous collector current?

The maximum continuous collector current is 100mA.

What is the package type for the BC848CWT1G?

The device is housed in an SC-70 (SOT-323) surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BC848CWT1G RoHS compliant?

Yes, the datasheet states the device is RoHS compliant and Pb-Free.

What is the minimum DC current gain (hFE)?

The minimum DC current gain (hFE) is 420 at Vce=5V and Ic=2mA.

What is the typical transition frequency?

The typical transition frequency is 100MHz.

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