BC848CPDW1T1G BC848CPDW1T1G is a dual complementary NPN/PNP transistor from On Semiconductor. It features a maximum collector-emitter voltage of 30V and continuous collector current of 100mA in a surface-mount SOT-363 package.
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BC848CPDW1T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
BC848CPDW1T1G is a dual complementary NPN/PNP transistor from On Semiconductor. It features a maximum collector-emitter voltage of 30V and continuous collector current of 100mA in a surface-mount SOT-363 package.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.03 - $0.19

BC848CPDW1T1G Available from 1 distributor

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✓ Non-Authorised
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BC848CPDW1T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC848CPDW1T1G Description

Short technical summary and product information.

The BC848CPDW1T1G is a dual complementary NPN/PNP bipolar junction transistor array from On Semiconductor, designed for general purpose switching and amplification. It integrates one NPN and one PNP transistor in a single compact SOT-363 (SC-88) surface-mount package.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V for both transistors, continuous collector current (IC) of 100mA (peak 200mA), and a minimum DC current gain (hFE) of 420 at IC=2mA, VCE=5V. The maximum VCE saturation voltage is 600mV at IB=5mA, IC=100mA. Transition frequency (fT) is 100 MHz.

 

Thermal characteristics: power dissipation is 380 mW per device on an FR-5 board at 25°C, with a derating factor of 3.0 mW/°C above 25°C. Operating temperature range is -55°C to 150°C. The device is RoHS3 compliant, Pb-Free, and Halogen Free.

 

The BC848CPDW1T1G is supplied in tape and reel packaging with a standard quantity of 3000 pieces. It is suitable for space-constrained designs requiring matched complementary transistor pairs.

BC848CPDW1T1G Quick Information

Product Type: Bipolar Junction Transistor Array
Series: BC848C
Canonical Name: BC848CPDW1T1G
Subcategory: Complementary NPN/PNP

BC848CPDW1T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BC848CPDW1T1G Estimated Pricing

Qty Low High
1+ $0.19 $0.19
10+ $0.12 $0.12
100+ $0.07 $0.07
500+ $0.05 $0.05
1,000+ $0.05 $0.05
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC848CPDW1T1G Features

  • Dual NPN/PNP transistor in one package.
  • Rated for 30V collector-emitter voltage.
  • 100mA continuous collector current.
  • Surface mount SOT-363 package.
  • RoHS3 and Pb-Free compliant.

BC848CPDW1T1G Applications

  • Used in general purpose switching circuits.
  • Ideal for signal amplification stages.
  • Suitable for portable battery-powered devices.
  • Common in audio preamplifier designs.

BC848CPDW1T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

30V for both NPN and PNP transistors.

What package does the BC848CPDW1T1G come in?

SOT-363 (also known as SC-88, 6-TSSOP).

What is the operating temperature range?

-55°C to 150°C (TJ).

Is the BC848CPDW1T1G RoHS compliant?

Yes, RoHS3 compliant.

What is the DC current gain (hFE)?

Minimum 420 at IC=2mA, VCE=5V.

What is the maximum collector current?

100mA continuous, 200mA peak.

What is the transition frequency?

100 MHz.

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