BC848CMTF NPN epitaxial silicon transistor rated for 30V collector-emitter voltage and 100mA collector current. Suitable for switching and amplifier applications.
Mfr Part #:

BC848CMTF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN epitaxial silicon transistor rated for 30V collector-emitter voltage and 100mA collector current. Suitable for switching and amplifier applications.
Total Stock: 1,335 pcs

BC848CMTF Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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985 pcs
985 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
350 pcs
350 pcs On Request 1 On Request On Request On Request On Request On Request

BC848CMTF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter On Voltage (VBE(ON))
Collector Cut-off Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Packing Method
Power
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Thermal Resistance Junction-to-Ambient
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC848CMTF Description

Short technical summary and product information.

The BC848CMTF is an NPN epitaxial silicon bipolar junction transistor from On Semiconductor, designed for general-purpose switching and amplifier applications. It features a maximum collector-emitter voltage (Vceo) of 30V and a maximum collector current of 100mA, making it suitable for low-power signal processing tasks.

 

With a typical current gain bandwidth product (fT) of 300MHz and a DC current gain (hFE) of 420 minimum at 2mA and 5V, this transistor offers good high-frequency performance and consistent amplification. The maximum Vce saturation voltage is 600mV at 5mA base current and 100mA collector current.

 

The device is housed in a surface-mount SOT-23-3 package (also known as TO-236-3 or SC-59) and is supplied in tape and reel packaging for automated assembly. It has a maximum power dissipation of 310mW and a junction temperature rating of 150°C.

BC848CMTF Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: BC848
Canonical Name: BC848CMTF NPN Epitaxial Silicon Transistor
Subcategory: Single Bipolar Junction Transistor

BC848CMTF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC848CMTF Features

  • NPN epitaxial silicon bipolar transistor.
  • Maximum 30V collector-emitter voltage rating.
  • Maximum 100mA collector current rating.
  • 300MHz typical current gain bandwidth product.
  • Surface mount SOT-23-3 package.

BC848CMTF Applications

  • Suitable for general purpose switching circuits.
  • Ideal for low-power amplifier stages.
  • Used in thick and thin-film circuits.
  • Complementary to PNP types BC856/BC857/BC858.

BC848CMTF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the BC848CMTF?

The maximum collector-emitter voltage (Vceo) is 30V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 100mA.

What is the package type for the BC848CMTF?

The BC848CMTF is available in a surface mount SOT-23-3 package (also known as TO-236-3 or SC-59).

What is the operating junction temperature range?

The maximum junction temperature (Tj) is 150°C.

What is the typical current gain bandwidth product (fT)?

The typical current gain bandwidth product (fT) is 300MHz.

What is the DC current gain (hFE) of this transistor?

The minimum DC current gain (hFE) is 420 at a test condition of Ic=2mA and Vce=5V.

Is the BC848CMTF RoHS compliant?

RoHS compliance is listed as RoHS3 Compliant, but this information is unverified and should be confirmed with the manufacturer.

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