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BC848CDXV6T1G Dual NPN general purpose transistor in SOT-563 package. 30V VCEO, 100mA collector current, 500mW total power dissipation.
Mfr Part #:

BC848CDXV6T1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual NPN general purpose transistor in SOT-563 package. 30V VCEO, 100mA collector current, 500mW total power dissipation.
✓ Total Stock: 8,000 pcs
$ Price Range: $0.07

BC848CDXV6T1G Available from 1 distributor

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✓ Non-Authorised
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Rayichip ✓
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8,000 pcs
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8000 pcs On Request 1 On Request On Request On Request On Request On Request
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BC848CDXV6T1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BC848CDXV6T1G Description

Short technical summary and product information.

The BC848CDXV6T1G is a dual NPN bipolar junction transistor array from onsemi designed for general purpose amplifier and switching applications. Each transistor features a maximum collector-emitter voltage of 30V and a continuous collector current rating of 100mA. The device offers high DC current gain with a minimum hFE of 420 at 2mA, 5V, making it suitable for low-level signal amplification.

 

Housed in a compact SOT-563 surface mount package, the BC848CDXV6T1G supports low power designs with a total device dissipation of 500mW when both junctions are heated. The thermal resistance junction-to-ambient is 250°C/W under the same condition. The operating junction temperature range spans -55°C to 150°C.

 

The part is Pb-Free and RoHS compliant as indicated in the datasheet. It is a direct alternative to the BC847CDXV6T1G (45V VCEO) for applications requiring a 30V collector-emitter breakdown voltage.

BC848CDXV6T1G Quick Information

Product Type: Bipolar Junction Transistor Array
Series: BC848CDXV6T1
Canonical Name: BC848CDXV6T1G Dual NPN General Purpose Transistor
Subcategory: Dual NPN Array

BC848CDXV6T1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BC848CDXV6T1G Estimated Pricing

Qty Low High
4,537+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC848CDXV6T1G Features

  • Dual NPN transistors in one package.
  • 30V maximum collector-emitter voltage.
  • 100mA continuous collector current rating.
  • 500mW total power dissipation capability.
  • Pb-Free and RoHS compliant.

BC848CDXV6T1G Applications

  • General purpose amplifier circuits.
  • Low power switching applications.
  • Signal processing in portable devices.

BC848CDXV6T1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the BC848CDXV6T1G?

30V.

What is the maximum collector current rating?

100mA.

What package does the BC848CDXV6T1G come in?

SOT-563 surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BC848CDXV6T1G RoHS compliant?

Yes, the datasheet indicates it is Pb-Free, implying RoHS compliance.

What is the typical DC current gain (hFE)?

Minimum 420, typical 520, maximum 800 at Ic=2mA, Vce=5V.

What is the total power dissipation?

500mW when both junctions are heated.

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