| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,020 pcs
|
43020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC848CDW1T1G is a dual NPN bipolar junction transistor from On Semiconductor, designed for general purpose amplifier applications. It is housed in a compact SOT-363/SC-88 surface mount package, suitable for low power designs. Each transistor offers a maximum collector-emitter voltage of 30V and continuous collector current of 100mA. The device features a high DC current gain (hFE) of 420 minimum at 2mA collector current and 5V VCE, making it suitable for signal amplification stages. The transition frequency is typically 100MHz. The package supports a maximum power dissipation of 380mW per device on an FR-5 board at 25°C ambient. The operating junction temperature range is -55°C to 150°C. The BC848CDW1T1G is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free, meeting environmental standards for modern electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.07 | $0.07 |
| 3,000+ | $0.04 | $0.04 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
6-TSSOP, SC-88, SOT-363 surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.
Minimum 420 at Ic=2mA, Vce=5V.
100mA continuous.
Typically 100MHz.