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BC848BT116 NPN bipolar junction transistor with 30V collector-emitter voltage, 100mA collector current, 200MHz transition frequency, and 350mW power dissipation in a surface mount SST3 package.
Mfr Part #:

BC848BT116

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN bipolar junction transistor with 30V collector-emitter voltage, 100mA collector current, 200MHz transition frequency, and 350mW power dissipation in a surface mount SST3 package.
✓ Total Stock: 2,703 pcs
$ Price Range: $0.06 - $0.38

BC848BT116 Available from 1 distributor

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✓ Non-Authorised
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2,703 pcs
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BC848BT116 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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BC848BT116 Description

Short technical summary and product information.

The BC848BT116 is an NPN bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (Vceo) of 30V and a collector current (Ic) rating of 100mA. The device offers a minimum DC current gain (hFE) of 200 at Ic=2mA and Vce=5V, with a maximum Vce saturation of 600mV at Ib=5mA and Ic=100mA. The transition frequency (ft) is 200MHz, making it suitable for general-purpose switching and amplification applications.

 

The transistor is rated for a power dissipation of 350mW and a maximum junction temperature of 150°C. It is designed for surface mount assembly and is available in a TO-236-3, SC-59, or SOT-23-3 package, with the supplier device package designated as SST3. This compact package enables high-density PCB designs.

 

Typical applications include switching circuits, signal amplification, and driver stages in consumer electronics, industrial controls, and communication devices. The device is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).

BC848BT116 Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BC848BT116 NPN Bipolar Transistor
Subcategory: Single NPN

BC848BT116 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC848BT116 Estimated Pricing

Qty Low High
1+ $0.38 $0.38
10+ $0.23 $0.23
100+ $0.15 $0.15
500+ $0.11 $0.11
1,000+ $0.10 $0.10
3,000+ $0.08 $0.08
6,000+ $0.07 $0.07
9,000+ $0.06 $0.06
24,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC848BT116 Features

  • NPN bipolar junction transistor design.
  • 30V collector-emitter voltage rating.
  • 100mA collector current capability.
  • 200MHz transition frequency for switching.
  • Surface mount SST3 package for compact designs.

BC848BT116 Applications

  • General purpose switching circuits.
  • Signal amplification in consumer electronics.
  • Driver stages in industrial controls.
  • Low-power RF applications.

BC848BT116 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage (Vceo) of the BC848BT116?

The collector-emitter voltage (Vceo) is 30V.

What is the maximum collector current (Ic) for this transistor?

The maximum collector current (Ic) is 100mA.

What is the transition frequency (ft) of the BC848BT116?

The transition frequency (ft) is 200MHz.

What is the power dissipation rating?

The power dissipation (Pd) is 350mW.

What package does the BC848BT116 come in?

It is available in TO-236-3, SC-59, and SOT-23-3 packages, with the supplier device package designated as SST3.

What is the operating temperature range?

The maximum junction temperature (TJ) is 150°C.

Is the BC848BT116 RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

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