BC848BLT1G NPN general purpose transistor from onsemi with 30V collector-emitter breakdown voltage and 100mA continuous collector current. Surface mount in SOT-23-3 package.
Mfr Part #:

BC848BLT1G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN general purpose transistor from onsemi with 30V collector-emitter breakdown voltage and 100mA continuous collector current. Surface mount in SOT-23-3 package.
✓ Total Stock: 34,734 pcs
$ Price Range: $0.03 - $0.14

BC848BLT1G Available from 4 distributors

✓ Authorised
✓ Non-Authorised

BC848BLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Halogen Free
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

BC848BLT1G Description

Short technical summary and product information.

The BC848BLT1G is an NPN silicon bipolar junction transistor from onsemi, designed for general purpose switching and amplification. It features a collector-emitter breakdown voltage of 30V minimum and continuous collector current up to 100mA. The DC current gain (hFE) is at least 200 at IC=2mA and VCE=5V, ensuring consistent performance in low-power applications.

 

Power dissipation is rated at 300mW on an alumina substrate and 225mW on an FR-5 board, with thermal resistance of 417°C/W and 556°C/W respectively. The device operates over a junction temperature range of -55°C to 150°C. It is ESD rated at >4000V Human Body Model and >400V Machine Model, providing robust protection during handling.

 

Packaged in the industry-standard SOT-23-3 (TO-236-3, SC-59) surface mount package, the BC848BLT1G is suitable for compact designs. It is RoHS compliant, Pb-Free, Halogen Free/BFR Free, and has MSL Level 1 sensitivity. This transistor is ideal for portable electronics, signal processing, and low-power driver circuits.

BC848BLT1G Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: BC848BLT1G NPN General Purpose Transistor
Subcategory: NPN

BC848BLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1
REACH Status: REACH Unaffected
Lead Free: Pb-Free

BC848BLT1G Estimated Pricing

Qty Low High
1+ $0.14 $0.14
10+ $0.09 $0.09
100+ $0.05 $0.05
500+ $0.04 $0.04
1,000+ $0.03 $0.03
3,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BC848BLT1G Features

  • NPN silicon transistor with 30V collector-emitter breakdown.
  • Continuous collector current up to 100mA.
  • DC current gain (hFE) minimum 200 at 2mA.
  • Surface mount SOT-23-3 package.
  • RoHS compliant, Pb-Free and Halogen Free.

BC848BLT1G Applications

  • General purpose switching and amplification circuits.
  • Low power signal processing.
  • Battery-powered portable electronics.
  • Automotive if qualified (check AEC-Q101 for S/NSV variants).

BC848BLT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of BC848BLT1G?

The minimum collector-emitter breakdown voltage (V(BR)CEO) is 30V at IC=10mA.

What is the maximum collector current?

The maximum continuous collector current (IC) is 100mA.

What is the DC current gain (hFE) of BC848BLT1G?

The minimum DC current gain (hFE) is 200 at IC=2mA and VCE=5V.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

What is the package type of BC848BLT1G?

The package is SOT-23-3 (also known as TO-236-3 or SC-59).

Is the BC848BLT1G RoHS compliant?

Yes, it is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

What is the ESD rating of BC848BLT1G?

ESD rating is >4000V HBM (Human Body Model) and >400V MM (Machine Model).

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