BC848ALT1 The BC848ALT1 is an NPN silicon general purpose transistor from On Semiconductor. It has a maximum collector-emitter voltage of 30V, collector current of 100mA, and is available in a SOT-23 surface-mount package.
Mfr Part #:

BC848ALT1

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The BC848ALT1 is an NPN silicon general purpose transistor from On Semiconductor. It has a maximum collector-emitter voltage of 30V, collector current of 100mA, and is available in a SOT-23 surface-mount package.
Total Stock: 735 pcs

BC848ALT1 Available from 1 distributor

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BC848ALT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Ic)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Emitter-Base Voltage (VEBO)
Junction Temperature (TJ)
Lead Style
Mounting Type
PD (Maximum @ Alumina Substrate, TA=25 °C)
RθJA (Maximum @ Alumina Substrate)
RθJA (Maximum @ FR -5 Board)
Storage Temperature
Storage Temperature (Tstg)
Tape & Reel
Termination Style
hFE (Minimum/Typical/Maximum @ IC = 10 µA, VCE = 5 V)
hFE (Minimum/Typical/Maximum @ Ic=2 mA, Vce=5 V)
pd (Maximum @ FR -5 Board, TA=25 °C)

BC848ALT1 Description

Short technical summary and product information.

The BC848ALT1 is an NPN silicon general purpose transistor from On Semiconductor, part of the BC846ALT1 series of preferred devices. It is designed for low-power amplification and switching applications.

 

Key electrical specifications include a maximum collector-emitter voltage of 30V, collector-base voltage of 30V, and emitter-base voltage of 5.0V. The continuous collector current is limited to 100mA. DC current gain (hFE) is specified as 200 minimum, 290 typical, and 450 maximum at IC=2mA and VCE=5V, with lower ranges at IC=10µA.

 

Thermal characteristics include maximum power dissipation of 225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient, with junction-to-ambient thermal resistance of 556°C/W and 417°C/W respectively. Junction and storage temperature range is -55°C to +150°C.

 

The device is housed in the industry-standard SOT-23 surface-mount package, suitable for automated assembly. The datasheet indicates Pb-Free packages are available and ESD ratings exceed 4000V Human Body Model and 400V Machine Model.

BC848ALT1 Quick Information

Product Type: Bipolar (BJT) Single Transistor
Series: BC846ALT1 Series
Canonical Name: NPN Silicon General Purpose Transistor
Subcategory: BJT - Single

BC848ALT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BC848ALT1 Features

  • NPN silicon general purpose transistor.
  • Rated for 30V collector-emitter voltage.
  • Supports 100mA continuous collector current.
  • Available in SOT-23 surface-mount package.
  • ESD rating above 4000V human body model.

BC848ALT1 Applications

  • Low-power switching and amplification circuits.
  • Signal amplification in battery-operated devices.
  • Use in general-purpose discrete transistor designs.
  • Suitable for signal level shifting applications.

BC848ALT1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the BC848ALT1?

The maximum collector-emitter voltage (VCEO) is 30V DC.

What is the collector current rating?

The continuous collector current is 100mA DC.

What package is the BC848ALT1 available in?

The BC848ALT1 is available in a SOT-23 surface-mount package.

What is the operating temperature range?

Junction and storage temperature range is -55°C to +150°C.

Is the BC848ALT1 RoHS compliant?

It is listed as RoHS3 compliant in existing data, though unverified; the datasheet indicates Pb-Free packages are available.

What is the DC current gain (hFE) of the BC848ALT1?

At IC=2mA and VCE=5V, hFE is 200 min, 290 typ, and 450 max (for the BC848A variant).

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