2SB852KT146B
ROHM Semiconductor
PNP Darlington transistor with -32V Vce and -0.3A Ic. Surface-mount SOT-23-3 package with high DC current gain.
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735 pcs
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735 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BC848ALT1 is an NPN silicon general purpose transistor from On Semiconductor, part of the BC846ALT1 series of preferred devices. It is designed for low-power amplification and switching applications.
Key electrical specifications include a maximum collector-emitter voltage of 30V, collector-base voltage of 30V, and emitter-base voltage of 5.0V. The continuous collector current is limited to 100mA. DC current gain (hFE) is specified as 200 minimum, 290 typical, and 450 maximum at IC=2mA and VCE=5V, with lower ranges at IC=10µA.
Thermal characteristics include maximum power dissipation of 225mW on FR-5 board and 300mW on alumina substrate at 25°C ambient, with junction-to-ambient thermal resistance of 556°C/W and 417°C/W respectively. Junction and storage temperature range is -55°C to +150°C.
The device is housed in the industry-standard SOT-23 surface-mount package, suitable for automated assembly. The datasheet indicates Pb-Free packages are available and ESD ratings exceed 4000V Human Body Model and 400V Machine Model.
The maximum collector-emitter voltage (VCEO) is 30V DC.
The continuous collector current is 100mA DC.
The BC848ALT1 is available in a SOT-23 surface-mount package.
Junction and storage temperature range is -55°C to +150°C.
It is listed as RoHS3 compliant in existing data, though unverified; the datasheet indicates Pb-Free packages are available.
At IC=2mA and VCE=5V, hFE is 200 min, 290 typ, and 450 max (for the BC848A variant).
