| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,444 pcs
|
2444 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Operating Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) |
The BC848AE6327HTSA1 from Infineon Technologies is an NPN bipolar junction transistor (BJT) suitable for various electronic applications. This component is housed in a compact TO-236-3, SC-59, SOT-23-3 surface-mount package, facilitating integration into dense circuit designs.
Key electrical characteristics include a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vce) of 30 V. The transistor offers a minimum DC current gain (hFE) of 110 at 2mA and 5V, with a maximum power dissipation of 330 mW. Its saturation voltage (Vce) is specified at a maximum of 600mV at 5mA collector current and 100mA base current.
The operating temperature range for this device is up to 150°C (TJ). It operates with a transition frequency of 250 MHz and has a very low collector cutoff current of 15nA (ICBO).
This transistor is supplied in Tape & Reel packaging. Its RoHS status is ROHS3 Compliant, REACH status is REACH Unaffected, and it has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the BC848AE6327HTSA1 is 100 mA.
The collector-emitter breakdown voltage (Vce) for the BC848AE6327HTSA1 is 30 V.
The operating temperature for the BC848AE6327HTSA1 can reach up to 150°C (TJ).
The BC848AE6327HTSA1 is an NPN bipolar junction transistor (BJT).
The BC848AE6327HTSA1 is supplied in Tape & Reel (TR) packaging in a TO-236-3, SC-59, SOT-23-3 package.
Yes, the BC848AE6327HTSA1 is ROHS3 Compliant.