BC847SH6327

The Infineon BC847SH6327 is a versatile NPN bipolar junction transistor (BJT) housed in a compact SOT-363 surface-mount package. This component is designed for a wide range of electronic applications requiring reliable signal amplification and switching.

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V, a collector-base voltage (VCBO) of 50V, and an emitter-base voltage (VEBO) of 6V. It can handle a continuous collector current (Ic) of up to 100mA and a maximum DC collector current of 200mA, with a power dissipation rating of 250mW. The transistor exhibits a typical collector-emitter saturation voltage of 200mV and a minimum gain bandwidth product (fT) of 250MHz.

Operating within a temperature range of -60C to +150C, the BC847SH6327 is suitable for diverse environmental conditions. Its NPN polarity and dual configuration make it a common choice for various circuit designs. The SOT-363 package is ideal for space-constrained PCB layouts, and it is supplied on a reel for automated assembly processes.

This transistor is qualified under AEC-Q101, indicating its suitability for automotive and industrial applications where reliability is paramount. Its specifications make it a suitable component for signal processing, amplification, and switching tasks in consumer electronics, industrial controls, and communication systems.