| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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764 pcs
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764 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BC847S is a versatile NPN Silicon AF Transistor Array suitable for AF input stages and driver applications. This component offers two internally isolated transistors with good matching within a single package.
Key electrical characteristics include a collector-emitter breakdown voltage of up to 65V (for BC846S/U) and 45V (for BC847S), a transition frequency (fT) of 250 MHz at 20mA and 5V, and a DC current gain (hFE) ranging from 200-450 depending on the operating conditions. The low collector-emitter saturation voltage (VCEsat) and base-emitter saturation voltage (VBEsat) are beneficial for efficient operation.
Packaged in a compact SOT-363 surface-mount case, the BC847S is designed for ease of integration into various electronic circuits. Its Pb-free and RoHS compliant nature aligns with modern environmental standards. The AEC-Q101 qualification indicates its suitability for demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) is 45 V for the BC847S.
The typical transition frequency (fT) is 250 MHz when measured at 20 mA collector current and 5 V VCE.
The BC847S is supplied in a SOT-363 surface mount package.
Yes, the BC847S is RoHS3 Compliant.