| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature |
The BC847PN from Diotec Semiconductor is a dual bipolar transistor array designed for control and signal processing applications. This component features an NPN and a PNP transistor integrated into a single SOT-363 surface-mount package.
Key electrical characteristics include a collector-emitter voltage (V CEO) of 45V DC and a continuous collector current (I C) of 100mA. The device has a power dissipation rating of 0.2W at 25°C ambient temperature. Its DC current gain (h fe) is typically 300 under specific test conditions (V CE 1V, I C 10mA). The operating junction temperature range is from -55°C to 150°C, with a storage temperature range also spanning -55°C to 150°C.
The BC847PN is suitable for industrial, mobility, energy, and consumer applications. It is RoHS compliant, lead-free, and halogen-free, meeting modern environmental standards. The SOT-363 package is designed for surface mounting, making it convenient for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (V CEO) for the BC847PN is 45V DC.
The continuous collector current (I C) for the BC847PN is 100mA.
The power dissipation (P tot) of the BC847PN is 0.2W at 25°C ambient temperature.
The typical DC current gain (h fe) of the BC847PN is 300 at V CE 1V and I C 10mA.
The operating junction temperature range for the BC847PN is -55°C to 150°C.
The BC847PN is available in a SOT-363 package.
Yes, the BC847PN is RoHS3 compliant.