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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,950 pcs
|
2950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) (Maximum @ IC=10 mA, IB=0.5 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum/Maximum @ IC=2 mA, VCE=5 V) | |
| DC Current Gain (hFE) (Minimum/Typical/Maximum @ Ic=10 µA, Vce=5 V) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (PD) (Maximum @ FR -4 board, 1.0 x 1.0 in pad) | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Thermal Resistance, Junction-to-Ambient (RθJA) (Maximum @ FR -4 board, 1.0 x 1.0 in pad) | |
| Thermal Resistance, Junction-to-Ambient (RθJA) (Maximum @ FR -4 board, min pad) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BC847CTT1G is an NPN silicon general purpose transistor designed for amplifier and switching applications. It is manufactured by On Semiconductor and housed in the compact SC-75/SOT-416 surface-mount package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 45V, collector-base voltage (VCBO) of 50V, and emitter-base voltage (VEBO) of 6.0V. The continuous collector current rating is 100mA. DC current gain (hFE) is specified at 420 minimum, 520 typical, and 800 maximum at IC=10µA, VCE=5V, and 270 minimum to 800 maximum at IC=2mA, VCE=5V. The transition frequency (ft) is 100MHz.
The device offers low saturation voltage, with VCE(sat) of 0.25V maximum at IC=10mA, IB=0.5mA, and 0.6V maximum at IC=100mA, IB=5mA. Power dissipation is 200mW on a minimum pad FR-4 board and 300mW on a 1.0x1.0 inch pad. Thermal resistance junction-to-ambient is 600°C/W (min pad) and 400°C/W (larger pad). Operating junction temperature range is -55°C to +150°C.
The BC847CTT1G is suitable for general purpose low-power amplification and switching in consumer, industrial, and automotive applications (AEC-Q101 qualified variants available). The SC-75 package is ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 45V.
The BC847CTT1G is available in the SC-75/SOT-416 surface-mount package.
The operating junction temperature range is -55°C to +150°C.
The part is listed as RoHS3 compliant, but this status is unverified.
At IC=10µA, VCE=5V, hFE is 420 min, 520 typ, 800 max. At IC=2mA, VCE=5V, hFE is 270 min, 800 max.
The transition frequency (ft) is 100 MHz.
The maximum continuous collector current (IC) is 100 mA.