BC847CLT3G

The BC847CLT3G is an NPN silicon bipolar junction transistor from On Semiconductor. It features a collector-emitter voltage rating of 45V, a collector-base breakdown voltage of 50V, and a continuous collector current of 100mA. The transistor offers a minimum DC current gain (hFE) of 420 at Ic=2mA, Vce=5V, and a saturation voltage of 600mV at Ib=5mA, Ic=100mA. The transition frequency is 100MHz, making it suitable for general-purpose switching and amplification up to moderate frequencies.

The device is housed in a SOT-23-3 surface mount package (also known as TO-236 or SC-59) with gull-wing leads. It supports a maximum power dissipation of 300mW on an alumina substrate and 225mW on an FR-5 board. The operating junction and storage temperature range is -55°C to 150°C. Thermal resistance junction-to-ambient is 417°C/W on alumina and 556°C/W on FR-5.

This transistor is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free. It has an ESD rating of >4000V Human Body Model and >400V Machine Model, and a Moisture Sensitivity Level of 1 (unlimited). The BC847CLT3G is well-suited for low-power switching, signal amplification, and interface circuits in consumer electronics, industrial controls, and portable devices.