| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies BC847C-E6327 is a general-purpose NPN bipolar transistor designed for switching and amplification applications. It features a maximum collector-emitter voltage (VCEO) of 45V and a maximum collector current (IC) of 100mA, with a maximum power dissipation (Ptot) of 250mW. The transistor operates with a minimum transition frequency (fT) of 100MHz and has a gain (hFE) range between 110 and 800.
This component is housed in a compact SOT23 surface-mount package, making it suitable for space-constrained designs. Its complementary part is the BC857. The RoHS status is compliant, and it is supplied in Tape & Reel or Cut Tape packaging options.
This transistor is ideal for general-purpose switching and amplification tasks in various electronic circuits. Its specifications make it a versatile component for designers working with discrete semiconductor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BC847C-E6327 is 45V.
The maximum collector current (IC) for the BC847C-E6327 is 100mA.
The maximum power dissipation (Ptot) for the BC847C-E6327 is 250mW.
The minimum transition frequency (fT) for the BC847C-E6327 is 100MHz.
The gain (hFE) range for the BC847C-E6327 is from 110 to 800.
The BC847C-E6327 is supplied in a SOT23 package.
The RoHS status of the BC847C-E6327 is Lead free/RoHS Compliant.