| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | 0035+ | On Request | On Request |
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| Tape & Reel | |
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The Infineon BC847BW E6327 is a versatile NPN/PNP bipolar junction transistor (BJT) suitable for various electronic applications. It is housed in a compact SOT-563 package, making it ideal for space-constrained designs. This transistor offers a collector-emitter breakdown voltage of 45V and can handle a maximum collector current of 100mA. Its maximum power dissipation is rated at 150mW.
The operating temperature range for the BC847BW E6327 is from -65°C to 150°C. It features a transition frequency of 300MHz for the NPN type and 200MHz for the PNP type. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V collector-emitter voltage for the NPN, and 220 for the PNP under the same conditions. The collector cutoff current (ICBO) is a maximum of 15nA.
This surface-mount transistor is supplied on tape and reel, facilitating automated assembly processes. Its robust specifications and small footprint make it a reliable choice for general-purpose amplification and switching tasks in electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 45V.
The maximum collector current is 100mA.
The operating temperature range is -65°C to 150°C.
It is supplied in a SOT-563 package.
It is packaged on tape and reel.